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1. product pro?le 1.1 general description the BGY288 is a power ampli?er module in a sot775 surface mounted package with a plastic cap. in the module, a mix of state of the art technologies as ingap, si-bicmos and si passive integration are used to combine high performance with a small size. the module comprises two functional sections, one for low-band (gsm850/egsm900) and one for high-band (dcs1800/pcs1900) with internal power detection, power control loop, input and output matching; see figure 2 . the power control circuit ensures a stable rf power output which is set by the voltage level on pin pc. the power control circuit is stabilized to compensate for variations in supply voltage, input power and temperature, and has a control range fully compliant with european telecommunication standards institute (etsi) time mask and power spectrum requirements. 1.2 features 1.2.1 general features 1.2.2 rf performance rf performance with a typical pulsed, controlled output power at t mb =25 c; v bat = 3.6 v; v stab = 2.8 v; z s =z l =50 w ; p d(lb) =2dbm/p d(hb) = 0 dbm; d =2:8. n f = 824 mhz to 849 mhz; h @ p sat = 50 %; p l = 34 dbm n f = 880 mhz to 915 mhz; h @ p sat = 55 %; p l = 34 dbm n f = 1710 mhz to 1785 mhz; h @ p sat = 50 %; p l = 32.5 dbm n f = 1850 mhz to 1910 mhz; h @ p sat = 50 %; p l = 32.5 dbm 1.3 applications n digital cellular radio systems with time division multiple access (tdma) operation (gsm systems) in four frequency bands: 824 mhz to 849 mhz, 880 mhz to 915 mhz, 1710 mhz to 1785 mhz and 1850 mhz to 1910 mhz. BGY288 power ampli?er with integrated control loop for gsm850, egsm900, dcs1800 and pcs1900 rev. 01 2 february 2005 preliminary data sheet n quad band gsm ampli?er n very small size (8 mm 8 mm) n 34 dbm controlled output power for gsm850/egsm900 n 32.5 dbm controlled output power for dcs1800/pcs1900 n suited for gprs class 12 (duty cycle d =4:8) n easy on/off and band select by digital control voltage n integrated power control loop n internal input and output matching n 3.6 v nominal supply voltage n speci?cation based on 3gpp ts 45.005
9397 750 14011 ? koninklijke philips electronics n.v. 2005. all rights reserved. preliminary data sheet rev. 01 2 february 2005 2 of 22 philips semiconductors BGY288 power ampli?er with integrated control loop 2. pinning information 2.1 pinning 2.2 pin description [1] pins 2, 3, 11 and 12 (v bat ) are not internally connected and must all be connected to the battery supply voltage. fig 1. pin con?guration transparent top view pc v stab band rfo_hb gnd rfo_lb 001aac028 v bat v bat rfi_lb n.c. gnd v bat v bat rfi_hb txon gnd 1 2 3 4 5 12 11 10 9 13 16 15 14 678 table 1: pin description symbol pin type description gnd 1, 13, 15 ground ground v bat [1] 2, 3 supply battery supply voltage for dcs1800/pcs1900 section 11, 12 supply battery supply voltage for gsm850/egsm900 section rfi_hb 4 analog input dcs1800/pcs1900 transmit rf input txon 5 logic input rf power control enable input pc 6 analog input rf power control input v stab 7 supply stabilized supply voltage band 8 logic input low-band (lb) (gsm850/egsm900) or high-band (hb) (dcs1800/pcs1900) select input n.c. 9 not connected rfi_lb 10 analog input gsm850/egsm900 transmit rf input rfo_lb 14 analog output gsm850/egsm900 transmit rf output rfo_hb 16 analog output dcs1800/pcs1900 transmit rf output inner pads ground ground
9397 750 14011 ? koninklijke philips electronics n.v. 2005. all rights reserved. preliminary data sheet rev. 01 2 february 2005 3 of 22 philips semiconductors BGY288 power ampli?er with integrated control loop 3. ordering information 4. block diagram table 2: ordering information type number package name description version BGY288 - leadless surface mounted package; plastic cap; 16 terminations sot775a (1) pull-down resistor. fig 2. block diagram 001aab846 output matching biasing power sense 850 mhz and 900 mhz power amplifier rfo_lb 10 6 7 5 8 4 16 14 rfo_hb rfi_hb band txon v stab pc BGY288 rfi_lb output matching biasing logic control power sense 1800 mhz and 1900 mhz power amplifier power controller (1) (1)
9397 750 14011 ? koninklijke philips electronics n.v. 2005. all rights reserved. preliminary data sheet rev. 01 2 february 2005 4 of 22 philips semiconductors BGY288 power ampli?er with integrated control loop 5. functional description 5.1 operating conditions the BGY288 is designed to meet the 3gpp ts 45.005 technical speci?cation for the etsi. 5.2 power ampli?er the low band (gsm850 and egsm900) and the high band (dcs1800 and pcs1900) channel power ampli?ers each comprises three cascaded gain stages, input and output matching and harmonic ?lters. the output power of each ampli?er is determined by the bias on each of its 3 gain stages and is controlled by an internal signal generated in the power controller block. each power ampli?er block generates a power sense signal which is routed internally to the power control block. 5.3 control logic the control logic block generates the various signals to control the complete BGY288 depending on the signal levels on pins txon and band, as indicated in t ab le 3 . the control logic block supply voltage is via pin v stab . when pin v stab = 0 v, the BGY288 is in idle mode and the battery current consumption is almost zero. the power control block is enabled when pin txon goes high. the low band (gsm850/egsm900) channel is enabled when pin band goes low and the high band (dcs1800/pcs1900) channel is enabled when pin band goes high. both txon and band inputs have pull-down resistors of approximately 1 m w . 5.4 power controller the main inputs to the power controller block are the rf power control signal via pin pc and the output power sense signal internally generated by each power ampli?er block. the pc signal is the reference voltage for the requested level of output power, and is usually generated by an external digital-to-analog converter. the pc signal is buffered and compared with the output power sense signal. the resultant error signal is then ampli?ed by one of two integrators, the selection of which being dependant on the level of the band signal. the output of the selected integrator is the internal signal which controls the biasing circuits of the selected channel. 5.5 mode control table 3: mode control mode mode description v stab (v) txon band pc (v) idle power ampli?er fully off; minimal leakage current 0 low low < 0.15 standby control logic functioning; power ampli?er off 2.6 to 3 low high or low < 0.15 lb tx low-band transmit mode (gsm850/egsm900) 2.6 to 3 high low < 2.5 hb tx high-band transmit mode (dcs1800/pcs1900) 2.6 to 3 high high < 2.5
9397 750 14011 ? koninklijke philips electronics n.v. 2005. all rights reserved. preliminary data sheet rev. 01 2 february 2005 5 of 22 philips semiconductors BGY288 power ampli?er with integrated control loop 6. timing fig 3. timing diagram table 4: timing characteristics z s =z l =50 w ; p d(lb) = 0 dbm to 4 dbm / p d(hb) = - 2 dbm to +2 dbm; v bat = 3.1 v to 4.6 v; v stab = 2.6 v to 3.0 v; t mb = - 20 c to 85 c; d = 1 : 8 to 4 : 8; unless otherwise speci?ed. symbol parameter min typ max unit t d1 delay time; v stab to high voltage before txon goes high 0 - - m s t d2 delay time; band to low or high before txon goes high 0 - - m s t d3 delay time; rf signal on rfi_hb or rfi_lb before pc ramp-up 0-- m s t d4 delay time; pc start of ramp-up after txon goes high 10 - - m s t d5 delay time; txon to low after transition of pc to off condition 0-- m s t d6 delay time; v stab to 0 v, after txon goes low 10 - - m s t d7 delay time; change of band after txon goes low 0 - - m s t d8 delay time; removal of rf signal on rfi_hb or rfi_lb after transition of pc to off condition 0-- m s t d9 time between pc ramp-up and actual p l increase - - 3 m s 001aab847 t d4 t d1 t d3 t d9 t d8 t d5 t d7 t d6 t d2 v stab txon band p d(lb) , p d(hb) p l(lb) , p l(hb) 10 m s8 m s 10 m s (147 bits) 7056/13 (542.8) m s + 4 + 1 - 1 - 6 (**) - 30 (***) (*) db pc t 10 m s8 m s 10 m s
9397 750 14011 ? koninklijke philips electronics n.v. 2005. all rights reserved. preliminary data sheet rev. 01 2 february 2005 6 of 22 philips semiconductors BGY288 power ampli?er with integrated control loop 6.1 ramp-up v stab voltage must be available at minimum t d1 before txon goes high (power control loop activates). band selects the correct transmit channel (gsm850/egsm900, or dcs1800/pcs1900). band must be at the correct value before the rising edge of txon. the transition of txon to high enables the power control loop; the txon minimum t d4 period is a set-up time which allows the correct internal biasing conditions and the charge on the integration capacitors to be at the correct starting value before pc starts to increase. rf power must be present at the input of the selected channel (p d(lb) or p d(hb) ) before pc starts to ramp-up. the required rf output power level is reached by increasing pc in steps to the corresponding voltage level. the sequence of pc steps can be chosen to have approximately a quarter cosine wave ramp-up of p l(lb) or p l(hb) in order to prevent violation of the gsm power mask, and at the same time prevent violation of the spectrum due to transients. to avoid violation of the lowest power level in the gsm power mask (indicated by *; see figure 3 ), the BGY288 provides suf?cient isolation when txon goes high with pc at minimum value and rf power at input of power ampli?er. in lb tx mode, the system speci?cation for maximum output power of the handset is - 36 dbm. in hb tx mode, the system speci?cation for maximum output power of the handset is - 48 dbm. in BGY288 transmit mode, the handset antenna switch can be used to provide isolation between the power ampli?er and the antenna by setting the antenna switch to rx mode. this condition is used for the transmit mode isolation parameters given in section 9 . 6.2 ramp-down pc steps down from the voltage level for the current power level to off state. the sequence of pc steps can be chosen to have approximately a quarter cosine wave ramp-down of p l(lb) or p l(hb) in order to prevent violation of the gsm power mask, and at the same time prevent violation of the spectrum due to transients. the power control loop can be switched off (txon goes low) as soon as pc has reached the off state level. at the same time, band is allowed to change polarity and the rf input power at the selected channel (p d(lb) or p d(hb) ) can be removed. when input power is removed, there is no additional isolation speci?cation required to meet the gsm system speci?cation. in lb tx mode, the system speci?cation for maximum output power of the handset is - 54 dbm. in hb tx mode the system speci?cation for maximum output power is - 48 dbm. at minimum t d6 after txon goes low (power control loop deactivates) and when all charge in the power control loop capacitors is removed, the BGY288 can go into idle mode (v stab = 0 v).
9397 750 14011 ? koninklijke philips electronics n.v. 2005. all rights reserved. preliminary data sheet rev. 01 2 february 2005 7 of 22 philips semiconductors BGY288 power ampli?er with integrated control loop 7. limiting values [1] class 1b according to eia/jesd22-a114b [2] class a according to eia/jesd22-a115a 8. static characteristics table 5: limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v bat dc supply voltage idle mode - 7 v hb tx or lb tx mode - 5.3 v v stab stabilized dc supply voltage - 0.5 +3.3 v i stab stabilized supply current - 2 ma v pc dc output power control voltage - 3 v i pc current into output power control input - 2+2ma p d(hb) , p d(lb) input drive power on rfi_hb or rfi_lb - 10 dbm p l(lb) load power on rfo_lb - 37 dbm p l(hb) load power on rfo_hb - 35 dbm v band band switch voltage - 0.5 +3.3 v i band band switch current - 2+2ma v txon transmit control signal - 0.5 +3.3 v i txon current into transmit control input - 2+2ma p bat power from supply during pulse hb tx mode - 4 w lb tx mode - 7 w i bat current from supply during pulse hb tx mode - 1.6 a lb tx mode - 2.2 a t stg storage temperature - 40 +100 c t mb mounting base temperature d =2:8 - 30 +100 c d =4:8 - 30 +90 c v esd electrostatic discharge voltage human body model [1] - 500 v machine model [2] - 50 v table 6: static characteristics z s =z l =50 w ; p d(hb) , p d(lb) = 0 mw; v bat = 3.6 v; v stab = 2.8 v; t mb =25 c; unless otherwise speci?ed. symbol parameter conditions min typ max unit voltage supply v bat battery supply voltage [1] 2.9 - 3.1 v typical operating range 3.1 3.6 4.6 v [2] 4.6 - 5.2 v i bat leakage current standby mode - - 1.5 ma idle mode - - 10 m a v stab supply voltage standby, hb tx or lb tx mode 2.6 2.8 3.0 v idle mode 0 - 0.2 v
9397 750 14011 ? koninklijke philips electronics n.v. 2005. all rights reserved. preliminary data sheet rev. 01 2 february 2005 8 of 22 philips semiconductors BGY288 power ampli?er with integrated control loop [1] power ampli?er is functional from 2.9 v to 3.1 v, but will not meet all electrical speci?cation points. [2] power ampli?er is functional from 4.6 v to 5.2 v under 50 w conditions, but will not meet all electrical speci?cation points. [3] p d(lb) = 0 dbm to 4 dbm / p d(hb) = - 2 dbm to +2 dbm; v bat = 3.1 v to 4.6 v; v stab = 2.6 v to 3.0 v; t mb = - 20 c to +85 c; d =1:8to4:8; unless otherwise speci?ed. 9. dynamic characteristics i stab current consumption hb tx or lb tx mode - - 1 ma standby mode - - 1 ma digital inputs: txon, band [3] v il low-level input voltage 0 - 0.5 v v ih high-level input voltage 1.4 - 3 v i il low-level input current - - 3 m a i ih high-level input current - - 15 m a c i input capacitance - 4 - pf analog inputs: pc [3] v pc power control voltage 0 - 2.5 v i pc power control current - 100 - - m a c pc pc input capacitance - 4 - pf r pc pc input resistance - 1.2 - m w table 6: static characteristics continued z s =z l =50 w ; p d(hb) , p d(lb) = 0 mw; v bat = 3.6 v; v stab = 2.8 v; t mb =25 c; unless otherwise speci?ed. symbol parameter conditions min typ max unit table 7: dynamic characteristics gsm850 and egsm900 transmit mode z s =z l =50 w ; v bat = 3.6 v; v stab = 2.8 v; t mb =25 c; d = 1 : 8 to 4 : 8; t p = 575 m sto2300 m s; p d(lb) = 2 dbm; spurious signals on p d(lb) < - 50 dbm; lb tx mode selected; f = 824 mhz to 849 mhz for gsm850; f = 880 mhz to 915 mhz for egsm900; unless otherwise speci?ed. symbol parameter conditions min typ max unit p d(lb) rf input power 024dbm v pc reference voltage to set output power f = 897.5 mhz for egsm900; f = 836.5 mhz for gsm850; p l(lb) = 35 dbm --2v f = 897.5 mhz for egsm900; f = 836.5 mhz for gsm850; p l(lb) = 3 dbm 0.2 - - v
9397 750 14011 ? koninklijke philips electronics n.v. 2005. all rights reserved. preliminary data sheet rev. 01 2 february 2005 9 of 22 philips semiconductors BGY288 power ampli?er with integrated control loop p l(lb) available output power gsm850 v pc = 2.2 v 34.2 35 - dbm v pc = 2.0 v; v bat = 3.2 v; p d(lb) = 0 dbm; d =2:8 32.8 - - dbm v pc = 2.0 v; v bat = 3.2 v; p d(lb) = 0 dbm; d = 2 : 8; t mb =85 c 32.3 - - dbm egsm900 v pc = 2.2 v 35.2 36 - dbm v pc = 2.0 v; v bat = 3.2 v; p d(lb) = 0 dbm; d =2:8 33.8 - - dbm v pc = 2.0 v; v bat = 3.2 v; p d(lb) = 0 dbm; d = 2 : 8; t mb =85 c 33.3 - - dbm h ef?ciency gsm850 saturated power - 50 - % p l(lb) = 34 dbm - 45 - % ef?ciency egsm900 saturated power - 55 - % p l(lb) = 34 dbm - 50 - % d p l(lb) output power variation at nominal temperature range p l(lb) = 31 dbm to 34 dbm for egsm900 and p l(lb) = 31 dbm to 33 dbm for gsm850; set by pc [1] [2] - 0.7 - +0.7 db p l(lb) = 13 dbm to 31 dbm; set by pc [1] [2] - 1.5 - +1.5 db p l(lb) = 6 dbm to 13 dbm; set by pc [1] [2] - 2 - +2 db output power variation at extreme temperature range p l(lb) = 31 dbm to 34 dbm for egsm900 and p l(lb) = 31 dbm to 33 dbm for gsm850; set by pc [1] [3] - 1.2 - +1.2 db p l(lb) = 13 dbm to 31 dbm; set by pc [1] [3] - 2 - +2 db p l(lb) = 6 dbm to 13 dbm; set by pc [1] [3] - 3 - +3 db output power variation of frequency p l(lb) = 31 dbm to 34 dbm; set by pc [1] [4] - 0.3 - +0.3 db h 2 to h 13 harmonics p l(lb) 34 dbm - - - 5 dbm isolation h 2 into dcs1800/pcs1900 measured at rfo_hb; p l(lb) =34dbm - - - 15 dbm isolation h 3 into dcs1800/pcs1900 measured at rfo_hb; p l(lb) =34dbm - - - 25 dbm isolation p d(lb) = 4 dbm; v pc = 0.15 v; standby mode -- - 36 dbm p d(lb) = 4 dbm; v pc = 0.15 v; lb tx mode -- - 36 dbm vswr in input vswr p l(lb) < 6 dbm - - 6 : 1 p l(lb) = 6 dbm to 34 dbm; - 2 : 1 3 : 1 table 7: dynamic characteristics gsm850 and egsm900 transmit mode continued z s =z l =50 w ; v bat = 3.6 v; v stab = 2.8 v; t mb =25 c; d = 1 : 8 to 4 : 8; t p = 575 m sto2300 m s; p d(lb) = 2 dbm; spurious signals on p d(lb) < - 50 dbm; lb tx mode selected; f = 824 mhz to 849 mhz for gsm850; f = 880 mhz to 915 mhz for egsm900; unless otherwise speci?ed. symbol parameter conditions min typ max unit
9397 750 14011 ? koninklijke philips electronics n.v. 2005. all rights reserved. preliminary data sheet rev. 01 2 february 2005 10 of 22 philips semiconductors BGY288 power ampli?er with integrated control loop [1] condition to set v pc : v bat = 3.6 v; d = 2 : 8; p d(lb) = 2 dbm; t mb =25 c; f = 897.5 mhz for egsm900; f = 836.5 mhz for gsm850. [2] conditions for power variation: p d(lb) = 0 dbm to 4 dbm; f = 824 mhz to 849 mhz for gsm850; f = 880 mhz to 915 mhz for egsm900; t mb =15 cto70 c; v bat = 3.2 v to 4.2 v; v stab = 2.8 v 20 mv. [3] conditions for power variation: p d(lb) = 0 dbm to 4 dbm; f = 824 mhz to 849 mhz for gsm850; f = 880 mhz to 915 mhz for egsm900; t mb = - 20 c to +90 c; v bat = 3.2 v to 4.2 v; v stab = 2.8 v 20 mv. [4] conditions for power variation: p d(lb) = 2 dbm; f = 824 mhz to 849 mhz for gsm850; f = 880 mhz to 915 mhz for egsm900; t mb =25 c; v bat = 3.6 v; v stab = 2.8 v 20 mv. p n noise power rbw = 100 khz; f 0 = 897.5 mhz for egsm900; f 0 = 836.5 mhz for gsm850 f 0 + 27.5 mhz; p l(lb) < 34 dbm - - - 73 dbm f 0 + 37.5 mhz; p l(lb) < 34 dbm - - - 82 dbm f 3 1805 mhz; p l(lb) < 34 dbm - - - 77 dbm cg conversion gain f 0 = 915 mhz for egsm900; f 0 = 849 mhz for gsm850; p l(lb) = 6 dbm to 34 dbm; f ss1 =f 0 - 20 mhz; p ss1 = - 40 dbm; cg=p l(con) - p ss1 ; see figure 4 --28db ssg small signal gain f 0 = 915 mhz for egsm900; f 0 = 849 mhz for gsm850; p l(lb) = 6 dbm to 34 dbm; f ss2 =f 0 + 20 mhz; p ss2 = - 40 dbm; ssg=p l(ss2) - p ss2 ; see figure 4 --31db am/am am/am conversion p l(lb) = 6 dbm to 34 dbm; 6.5 % am modulation with f mod = 67 khz at rfi_lb - 5 8 % f mod = 140 khz at rfi_lb - 8 13 % f mod = 271 khz at rfi_lb - 14 20 % am/pm am/pm conversion p d(lb) = 1.5 dbm to 2.5 dbm; p l(lb) = 6 dbm to 34 dbm - 2 4 deg/db maximum control slope p l(lb) = 6 dbm to 34 dbm - - 200 db/v t r , t f carrier rise and fall time p l(lb) = 5 dbm to 34 dbm or 34 dbm to 5 dbm --2 m s f cl control loop bandwidth - 200 - khz stability p l(lb) 34 dbm; vswr 7 : 1 through all phases; v bat = 3.2 v to 4.6 v -- - 36 dbm ruggedness v bat = 3.2 v to 4.6 v; p l(lb) 34 dbm; d = 4 : 8; vswr 8 : 1 through all phases no degradation table 7: dynamic characteristics gsm850 and egsm900 transmit mode continued z s =z l =50 w ; v bat = 3.6 v; v stab = 2.8 v; t mb =25 c; d = 1 : 8 to 4 : 8; t p = 575 m sto2300 m s; p d(lb) = 2 dbm; spurious signals on p d(lb) < - 50 dbm; lb tx mode selected; f = 824 mhz to 849 mhz for gsm850; f = 880 mhz to 915 mhz for egsm900; unless otherwise speci?ed. symbol parameter conditions min typ max unit
9397 750 14011 ? koninklijke philips electronics n.v. 2005. all rights reserved. preliminary data sheet rev. 01 2 february 2005 11 of 22 philips semiconductors BGY288 power ampli?er with integrated control loop table 8: dynamic characteristics dcs1800/pcs1900 transmit mode z s =z l =50 w ; v bat = 3.6 v; v stab = 2.8 v; t mb =25 c; d =1:8to4:8; t p = 575 m sto2300 m s; p d(hb) = 0 dbm; spurious signals on p d(hb) < - 50 dbm; hb tx mode selected; f = 1710 mhz to 1785 mhz for dcs1800 ;f=1850mhzto1910mhzfor pcs1900; unless otherwise speci?ed. symbol parameter conditions min typ max unit p d(hb) rf input power - 2 0 +2 dbm v pc reference voltage to set output power f = 1747.6 mhz for dcs1800; f = 1880 mhz for pcs1900; p l(hb) = 32.5 dbm --2v f = 1747.6 mhz for dcs1800; f = 1880 mhz for pcs1900; p l(hb) = - 3 dbm 0.2 - - v p l(hb) available output power v pc = 2.2 v 32.7 33.5 - dbm v pc = 2.0 v; v bat = 3.2 v; p d(hb) = - 2 dbm; d =2:8 31.8 - - dbm v pc = 2.0 v; v bat = 3.2 v; p d(hb) = - 2 dbm; d = 2 : 8; t mb =85 c 31.3 - - dbm h ef?ciency dcs1800 saturated power - 50 - % p l(hb) = 31.3 dbm - 45 - % ef?ciency pcs1900 saturated power - 50 - % p l(hb) = 31.3 dbm - 45 - % d p l(hb) output power variation at nominal temperature range p l(hb) = 28 dbm to 32 dbm; set by pc [1] [2] - 0.7 - +0.7 db p l(hb) = 15 dbm to 28 dbm; set by pc [1] [2] - 1 - +1 db p l(hb) = 5 dbm to 15 dbm; set by pc [1] [2] - 2 - +2 db p l(hb) = 0 dbm to 5 dbm; set by pc [1] [2] - 3 - +3 db output power variation at extreme temperature range p l(hb) = 28 dbm to 32 dbm; set by pc [1] [3] - 1.2 - +1.2 db p l(hb) = 15 dbm to 28 dbm; set by pc [1] [3] - 1.5 - +1.5 db p l(hb) = 5 dbm to 15 dbm; set by pc [1] [3] - 2.5 - +2.5 db p l(hb) = 0 dbm to 5 dbm; set by pc [1] [3] - 3.5 - +3.5 db output power variation of frequency p l(hb) = 30 dbm to 32 dbm; set by pc [1] [4] - 0.3 - +0.3 db h 2 to h 7 harmonics p l(hb) 32 dbm - - - 5 dbm isolation p d(hb) = 2 dbm; v pc = 0.15 v; standby mode -- - 36 dbm p d(hb) = 2 dbm; v pc = 0.15 v; hb tx mode -- - 36 dbm vswr in input vswr p l(hb) < 0 dbm - - 6 : 1 p l(lb) = 2 dbm to 32 dbm - 2 : 1 3 : 1 p n noise power f 0 = 1785 mhz for dcs1800; f 0 = 1910 mhz for pcs1900; f 0 + 20 mhz; rbw = 100 khz; p l(hb) <32dbm -- - 77 dbm cg conversion gain f 0 = 1785 mhz for dcs1800; f 0 = 1 910 mhz for pcs1900; p l(hb) = 0 dbm to 32 dbm; f ss1 =f 0 - 20 mhz; p ss1 = - 40 dbm; cg=p l(con) - p ss1 ; see figure 4 --25db
9397 750 14011 ? koninklijke philips electronics n.v. 2005. all rights reserved. preliminary data sheet rev. 01 2 february 2005 12 of 22 philips semiconductors BGY288 power ampli?er with integrated control loop [1] condition to set v pc : v bat = 3.6 v; d = 2 : 8; p d(hb) = 0 dbm; t mb =25 c; f = 1747.6 mhz for dcs1800; f = 1880 mhz for pcs1900. [2] conditions for power variation: p d(hb) = - 2 dbm to +2 dbm; f = 1710 mhz to 1785 mhz for dcs1800; f = 1850 mhz to 1910 mhz for pcs1900; t mb =15 cto70 c; v bat = 3.2 v to 4.2 v; v stab = 2.8 v 20 mv. [3] conditions for power variation: p d(hb) = - 2 dbm to +2 dbm; f = 1710 mhz to 1785 mhz for dcs1800; f = 1850 mhz to 1910 mhz for pcs1900; t mb = - 20 c to +90 c; v bat = 3.2 v to 4.2 v; v stab = 2.8 v 20 mv. [4] conditions for power variation: p d(hb) = 0 dbm; f = 1710 mhz to 1785 mhz for dcs1800; f = 1850 mhz to 1910 mhz for pcs1900; t mb =25 c; v bat = 3.6 v; v stab = 2.8 v 20 mv. ssg small signal gain f 0 = 1785 mhz for dcs1800; f 0 = 1 910 mhz for pcs1900; p l(hb) = 0 dbm to 32 dbm; f ss2 =f 0 + 20 mhz; p ss2 = - 40 dbm; ssg=p l(ss2) - p ss2 ; see figure 4 --33db am/am am/am conversion p l(hb) = 0 dbm to 32 dbm; 6.5 % am modulation with f mod = 67 khz at rfi_hb - 5 8 % f mod = 140 khz at rfi_hb - 8 13 % f mod = 271 khz at rfi_hb - 14 20 % am/pm am/pm conversion p d(hb) = - 0.5 dbm to +0.5 dbm; p l(hb) = 0 dbm to 32 dbm - 2 4 deg/db maximum control slope p l(hb) = 0 dbm to 32 dbm - - 200 db/v t r , t f carrier rise and fall time p l(hb) from 0 dbm to 32 dbm and from 32 dbm to 0 dbm --2 m s f cl control loop bandwidth - 200 - khz stability p l(hb) 32 dbm; vswr 7 : 1 through all phases; v bat = 3.2 v to 4.6 v -- - 36 dbm ruggedness v bat = 3.2 v to 4.6 v; p l(hb) 32 dbm; d = 4 : 8; vswr 8 : 1 through all phases no degradation table 8: dynamic characteristics dcs1800/pcs1900 transmit mode continued z s =z l =50 w ; v bat = 3.6 v; v stab = 2.8 v; t mb =25 c; d =1:8to4:8; t p = 575 m sto2300 m s; p d(hb) = 0 dbm; spurious signals on p d(hb) < - 50 dbm; hb tx mode selected; f = 1710 mhz to 1785 mhz for dcs1800 ;f=1850mhzto1910mhzfor pcs1900; unless otherwise speci?ed. symbol parameter conditions min typ max unit
9397 750 14011 ? koninklijke philips electronics n.v. 2005. all rights reserved. preliminary data sheet rev. 01 2 february 2005 13 of 22 philips semiconductors BGY288 power ampli?er with integrated control loop a. conversion gain (cg) b. small signal gain (ssg) the total noise at the output of the power ampli?er is the summation of three sources: the noise present at the input of the power ampli?er at f ss1 ampli?ed by the conversion gain. the noise present at the input of the power ampli?er at f ss2 ampli?ed by the small signal gain. the noise generated by the power ampli?er itself, when the noise at the input of the power ampli?er is zero. fig 4. input and output signals 001aaa701 p f p ss1 f ss1 f 0 p d p f p l(ss1) p l(con) f ss1 f 0 2f 0 - f ss1 p l power amp cg = p l(con) - p ss1 001aaa702 p f p d f 0 f ss2 p ss2 p f p l(ss2) f 0 f ss2 p l power amp ssg = p l(ss2) - p ss2
9397 750 14011 ? koninklijke philips electronics n.v. 2005. all rights reserved. preliminary data sheet rev. 01 2 february 2005 14 of 22 philips semiconductors BGY288 power ampli?er with integrated control loop 10. application information drive signals must not be applied to pin 9. components listed in t ab le 9 . fig 5. test circuit 001aab848 c2 3 4 5 6 7 8 910 12 13 14 15 16 11 21 c4 c1 r1 r2 r3 r4 l1 c3 c10 rfo_hb rfo_lb rfi_hb txon pc v stab band rfi_lb c5 c6 c8 l2 l4 l3 c7 c11 v bat v bat c9 BGY288
9397 750 14011 ? koninklijke philips electronics n.v. 2005. all rights reserved. preliminary data sheet rev. 01 2 february 2005 15 of 22 philips semiconductors BGY288 power ampli?er with integrated control loop [1] c10 and c11 smooth the dc supply voltage (v bat ). [2] the striplines are on a double etched printed-circuit board ( e r = 4.6); thickness 0.8 mm. components listed in t ab le 9 . fig 6. printed-circuit board test circuit 001aab849 con5 con1 c1 r1 r2 r3 r4 r5 c10 c11 c6 c7 BGY288 c8 c9 v bat con6 v bat c2 c3 c4 c5 con2 con3 con4 rfi_hb rfi_lb rfo_lb rfo_hb table 9: list of components component description value dimensions supplier pcb printed-circuit board pb005h1 roland haefele con1, con2, con3, con4 jack assembly end launch sma connector 142-0701-881 johnson components con5 dc connector 5 pin con6 solder ring c1 smd capacitor 2.7 nf 0603 size c2, c3, c8, c9 smd capacitor 100 nf 0805 size c4, c5 smd capacitor 10 pf 0603 size c6, c7 smd capacitor 33 pf 0603 size c10, c11 electrolytic capacitor [1] 47 m f; 35 v matsushita r1, r3, r4, r5 smd resistor 0 w 0605 size r2 smd resistor 1 k w ; 0.1 w 0603 size l1, l2, l3, l4 stripline [2] z 0 = 50 w width 1.4 mm
9397 750 14011 ? koninklijke philips electronics n.v. 2005. all rights reserved. preliminary data sheet rev. 01 2 february 2005 16 of 22 philips semiconductors BGY288 power ampli?er with integrated control loop 11. package outline fig 7. package outline sot775a references outline version european projection issue date 03-10-10 iec jedec jeita sot775a leadless surface mounted package; plastic cap; 16 terminations sot775a a c d d 1 e 1 e dimensions solder resist pin 1 index unit mm 0.6 1.6 1.55 b 0.9 b 1 dimensions (mm are the original dimensions) a max. 8.2 7.8 d 0.6 z e2 0.3 z e1 0.6 z d2 0.3 z d1 0.56 cd 1 8.2 7.8 ee 1.7 e 1 1.85 e 2 0.9 z 1 z 1 1.2 z 2 0.6 z 5 0.6 z 6 1.7 z 3 1.6 z 4 7.95 7.65 7.95 7.65 0.6 e 1 l 0.1 y max. e 1 (12 ) z 6 (36 ) z 5 (36 ) z 1 z 3 z 4 z 2 b (14 ) z d1 (10 ) z (8 ) b 1 (2 ) z d2 (10 ) e 2 (2 ) e (2 ) 0 5 10 mm scale z e1 (10 ) z e2 (10 ) l (16 ) y note 1. general tolerance 0.050 mm, unless specified otherwise. 16 15 14 6 7 8 12345 13 12 11 10 9
9397 750 14011 ? koninklijke philips electronics n.v. 2005. all rights reserved. preliminary data sheet rev. 01 2 february 2005 17 of 22 philips semiconductors BGY288 power ampli?er with integrated control loop 12. soldering recommendations 12.1 re?ow pro?le the BGY288 is a laminate-based power ampli?er module in a leadless grid array (lga) package. the module can be assembled using a standard surface mount technology (smt) re?ow process in a convection or ir-oven. the minimum and maximum limits of the temperature pro?le are shown in figure 8 . the actual pro?le has to be within these limits, and will depend on the printed-circuit board material, the number and size of the components to be assembled, and the type of solder which is being used. it is recommended to use a standard no-clean solder paste like snpb for pro?les having leads containing solder, or snagcu for lead-free assembly processes. the parameters and corresponding values for snpb and snagcu solder are given in t ab le 10 . 12.2 printed-circuit board layout the printed-circuit board footprint layout is a copy of the metal pattern on the underside of the lga package. it is recommended that the printed-circuit board is designed with a large ground plane, and that the solder lands of the ground plane solder mask are de?ned as shown in figure 9 . fig 8. recommended re?ow temperature pro?le table 10: re?ow soldering parameters symbol parameter snpb solder snagcu solder unit a temperature gradient 3 3 c/s t e pre-heat (soak) temperature 100 to 150 150 to 200 c t e pre-heat time 60 to 120 60 to 180 s t r re?ow temperature > 183 > 217 c t r re?ow time 60 to 150 60 to 150 s t p maximum peak temperature 240 260 c b temperature gradient < 5 < 5 c/s time 25 c to peak temperature 6 minutes max. 8 minutes max. 001aaa705 t e t p t r t e(max) t e(min) t r t temperature a a b
9397 750 14011 ? koninklijke philips electronics n.v. 2005. all rights reserved. preliminary data sheet rev. 01 2 february 2005 18 of 22 philips semiconductors BGY288 power ampli?er with integrated control loop 12.3 stencil design the recommended dimensions of the solder stencil are given in figure 9 and are based on a stencil thickness of 125 m m. using a thinner or thicker stencil will require the stencil aperture dimensions to be adjusted. 12.4 rework if rework is required, it is recommended that a bga rework station with a programmable top and bottom heater is used. the ?rst step of the rework process is to pre-heat the printed-circuit board with the bottom heater of the rework station. when the board has reached the pre-heat temperature, the top heater can be used to increase the temperature above the melting point of the solder. the component which has to be replaced can be picked up with a vacuum nozzle. before placing a new component the remaining solder on the board must be removed. fresh solder can be dispensed, a new component placed, and the board heated as described previously. 12.5 moisture sensitivity level the BGY288 is tested according to the jedec standard jesd 22-a113c. the BGY288 is classi?ed on msl3 for a lead soldering pro?le with a peak temperature of 240 c, and on msl4 for a lead-free soldering pro?le with a peak temperature of 260 c.
9397 750 14011 ? koninklijke philips electronics n.v. 2005. all rights reserved. preliminary data sheet rev. 01 2 february 2005 19 of 22 philips semiconductors BGY288 power ampli?er with integrated control loop fig 9. footprint layout and solder stencil design mgx467 solder lands solder stencil opening dimensions in mm 0.60 0.60 0.60 0.60 0.60 0.90 0.80 1.10 1.10 1.10 7.40 5.20 5.40 7.40 0.60 0.60 1.10 1.10 1.10 1.10 0.60 0.57 0.60 0.57 0.60 0.55 0.60 0.30 0.30 0.40 0.57 0.60 0.85 0.90 0.55 0.60 detail a (14 ) a b c detail b (2 ) detail c (36 )
9397 750 14011 ? koninklijke philips electronics n.v. 2005. all rights reserved. preliminary data sheet rev. 01 2 february 2005 20 of 22 philips semiconductors BGY288 power ampli?er with integrated control loop 13. revision history table 11: revision history document id release date data sheet status change notice doc. number supersedes BGY288_1 20050202 preliminary data sheet - 9397 750 14011 -
philips semiconductors BGY288 power ampli?er with integrated control loop 9397 750 14011 ? koninklijke philips electronics n.v. 2005. all rights reserved. preliminary data sheet rev. 01 2 february 2005 21 of 22 14. data sheet status [1] please consult the most recently issued data sheet before initiating or completing a design. [2] the product status of the device(s) described in this data sheet may have changed since this data sheet was published. the l atest information is available on the internet at url http://www.semiconductors.philips.com. [3] for data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 15. de?nitions short-form speci?cation the data in a short-form speci?cation is extracted from a full data sheet with the same type number and title. for detailed information see the relevant data sheet or data handbook. limiting values de?nition limiting values given are in accordance with the absolute maximum rating system (iec 60134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information applications that are described herein for any of these products are for illustrative purposes only. philips semiconductors make no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. 16. disclaimers life support these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips semiconductors for any damages resulting from such application. right to make changes philips semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. when the product is in full production (status production), relevant changes will be communicated via a customer product/process change noti?cation (cpcn). philips semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise speci?ed. ics with gsm or 3g functionality purchase of a philips ic with gsm functionality does not convey an implied license under any patent right on the gsm or 3g standard. a license for the philips portfolio of gsm and 3g patents needs to be obtained via philips intellectual property & standards ( www .ip .philips .com ), e-mail: inf o .licensing@philips .com . 17. contact information for additional information, please visit: http://www.semiconductors.philips.com for sales of?ce addresses, send an email to: sales.addresses@www.semiconductors.philips.com level data sheet status [1] product status [2] [3] de?nition i objective data development this data sheet contains data from the objective speci?cation for product development. philips semiconductors reserves the right to change the speci?cation in any manner without notice. ii preliminary data quali?cation this data sheet contains data from the preliminary speci?cation. supplementary data will be published at a later date. philips semiconductors reserves the right to change the speci?cation without notice, in order to improve the design and supply the best possible product. iii product data production this data sheet contains data from the product speci?cation. philips semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. relevant changes will be communicated via a customer product/process change noti?cation (cpcn).
? koninklijke philips electronics n.v. 2005 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. date of release: 2 february 2005 document number: 9397 750 14011 published in the netherlands philips semiconductors BGY288 power ampli?er with integrated control loop 18. contents 1 product pro?le . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.2.1 general features . . . . . . . . . . . . . . . . . . . . . . . . 1 1.2.2 rf performance . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 2.1 pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 2.2 pin description . . . . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 3 4 block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3 5 functional description . . . . . . . . . . . . . . . . . . . 4 5.1 operating conditions. . . . . . . . . . . . . . . . . . . . . 4 5.2 power ampli?er . . . . . . . . . . . . . . . . . . . . . . . . . 4 5.3 control logic . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 5.4 power controller . . . . . . . . . . . . . . . . . . . . . . . . 4 5.5 mode control . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 6 timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 6.1 ramp-up . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 6.2 ramp-down . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 7 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 7 8 static characteristics. . . . . . . . . . . . . . . . . . . . . 7 9 dynamic characteristics . . . . . . . . . . . . . . . . . . 8 10 application information. . . . . . . . . . . . . . . . . . 14 11 package outline . . . . . . . . . . . . . . . . . . . . . . . . 16 12 soldering recommendations . . . . . . . . . . . . . 17 12.1 re?ow pro?le . . . . . . . . . . . . . . . . . . . . . . . . . 17 12.2 printed-circuit board layout . . . . . . . . . . . . . . . 17 12.3 stencil design . . . . . . . . . . . . . . . . . . . . . . . . . 18 12.4 rework . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 12.5 moisture sensitivity level . . . . . . . . . . . . . . . . . 18 13 revision history . . . . . . . . . . . . . . . . . . . . . . . . 20 14 data sheet status . . . . . . . . . . . . . . . . . . . . . . . 21 15 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 16 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 17 contact information . . . . . . . . . . . . . . . . . . . . 21

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